Mayank Shrivastava (third from right) holding a representative power device 8” wafer, with some of his PhD students who work on various aspects of GaN Power and RF technology (Photo credit: IISc) ...
Abstract: Pentacene organic thin-film transistors (OTFTs) with HfLaON high-k gate dielectric have been fabricated using various gate-electrode materials, including different metals (Al, Au, Cu, Cr, Ti ...
Abstract: This article presents a novel approach to implementing a positive-edge triggered D flip-flop utilizing pass transistors, aiming to offer improved performance and energy efficiency. The ...
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