Abstract: The implementation of vertically stacked gate-all-around nanosheet FET (GAA NSFET) may help improve the performance of static random access memory (SRAM) for the design flexibility with ...
Abstract: This research implements a 7nm FinFET-based 7T SRAM cell, designed using Xschem and simulated with Ngspice. The primary emphasis of this research aimed at reducing the propagation delay and ...
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