Electronic Design

SiC Transistor Basics: FAQs

Silicon Carbide (SiC) MOSFETs exhibit higher blocking voltage, lower on state resistance and higher thermal conductivity than their silicon counterparts. SiC MOSFETs are designed and essentially ...
Design-Reuse

TSMC's SiC Substrate Strategy: Scaling Thermal Performance for AI and 3D Packaging

Silicon carbide (SiC) is best known as the wide-bandgap material driving high-efficiency power electronics that support the green transition. Yet its potential reaches beyond power electronics. SiC’s ...
EDN

Qorvo adds 1200-V SiC modules in compact package

These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...
Electronic Design

2,300-V SiC Power Module Raises the Bar for Renewable Energy

Wolfspeed is bringing the power-handling properties of silicon carbide (SiC) to the renewable energy, energy storage, and high-capacity EV fast-charging sectors with its new family of 2,300-V power ...
EDN

SiC power modules gain low-resistance options

SemiQ expands its 1200-V Gen3 SiC MOSFET family with SOT-227 modules offering on-resistance values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. GCMS models are co-packaged with a Schottky barrier diode (SBD), while ...
Yahoo Finance

ROHM Releases DOT-247: Integrated 2-in-1 SiC Molded Module for Industrial Applications

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...
Machine Design

1.7 kV SiC Half Bridge Module Simplifies Two-Level Topologies

Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...