Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
What just happened? A Californian company is launching what it calls a ground-breaking solution for increasing DRAM chip density with 3D stacking technology. The new memory chips will greatly improve ...
512GB DRAM sounds huge, but don’t hold your breath for consumer availability NEO’s 3D X-DRAM stacks layers sky-high, but price and practicality remain unclear AI and enterprise systems will get the ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...
TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
Samsung Electronics has successfully stacked the next-gen 3D DRAM to 16 layers, twice as many as its competitor Micron. According to reports from TheElec and ZDNet Korea, citing industry sources, ...
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