"Semiconductor manufacturers rely on TCAD tools to accelerate development and optimize products using virtual experiments rather than physical ones," said Andy Hsu, Founder and CEO of NEO ...
Today’s 3D integrated circuit (3D-IC) technology is the culmination of 40 years of research in universities and laboratories scattered across the globe. Beginning with dynamic random-access memory ...
In a new article by Business Korea and their industry sources, on June 23, SK hynix presented a research paper on the new 3D DRAM, aka "dream memory" at the semiconductor conference VLSI 2024, held in ...
How SEMulator3D can be used to study micro loading and manufacturing variability in an advanced DRAM process that exhibits a wiggling AA profile. In a DRAM structure, the charging and discharging ...
Neo Semiconductor has announced the world’s first 3D stackable DRAM technology, called 3D X-DRAM, that could revolutionize the memory industry as we know it today. Neo estimates that its 3D X-DRAM ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
Samsung and SK Hynix are advancing vertical channel transistor (VCT) technology through 4F² DRAM prototypes as a transitional step toward 3D DRAM, while Micron is bypassing VCT entirely to focus ...
Samsung Electronics has successfully stacked the next-gen 3D DRAM to 16 layers, twice as many as its competitor Micron. According to reports from TheElec and ZDNet Korea, citing industry sources, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback