SK hynix has just announced it's planning to develop a 4F2 (square) DRAM, joining South Korean rival Samsung and its journey into the world of 3D DRAM. The cost of EUV (extreme lithography) processes ...
Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
Samsung Electronics has successfully stacked the next-gen 3D DRAM to 16 layers, twice as many as its competitor Micron. According to reports from TheElec and ZDNet Korea, citing industry sources, ...
NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...
Showcase the technology of highly stackable oxide-semiconductor channel transistors Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable ...
Machine learning (ML), a subset of artificial intelligence (AI), has become integral to our lives. It allows us to learn and reason from data using techniques such as deep neural network algorithms.
Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of ...
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